IndiumV3, Russie, Analysis, bibRecord, 000088

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Identifieur interne : 000088 ( Russie/Analysis ); précédent : 000087; suivant : 000089

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Auteurs : RBID : Pascal:11-0277139

Descripteurs français

Pascal (Inist)
- Essai non destructif, Réflecteur, Miroir, Domaine temps fs, Propriété optique, Nanostructure, Puits quantique, Composé ternaire, Gallium Arséniure, Indium Arséniure, Absorbant saturable, Essai optique, As Ga In, InGaAs, 4279F, Absorption saturable.

English descriptors

KwdEn :
- Gallium Arsenides, Indium Arsenides, Mirrors, Nanostructures, Nondestructive testing, Optical properties, Optical testing, Quantum wells, Reflectors, Saturable absorbers, Saturable absorption, Ternary compounds, fs range.

Abstract

Mode-locking at repetition rate of 70 MHz with 115 fs spectral-limited pulses was obtained in Yb³⁺:KY(WO₄)₂ laser with low loss saturable absorber. Special design and manufacture of saturable absorber incorporating InGaAs quantum wells separated by nanostructured barriers and a wide band total reflector resulted in the semi-conductor saturable absorption mirror (SESAM) with short recovery time and tow non-saturable losses. This permitted to receive average output power of 1.57 W in made-locking regime close to 1.62 W power in cootinuous-wave regime.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002F97
to stream Main, to step Repository: 003546
to stream Russie, to step Extraction: 000088

Links to Exploration step

Pascal:11-0277139

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">115 fs pulses from Yb<sup>3+</sup>
:KY(WO<sub>4</sub>
)<sub>2</sub>
 laser with low loss nanostructured saturable absorber</title>
<author><name sortKey="Kovalyov, A A" uniqKey="Kovalyov A">A. A. Kovalyov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13, Academician Lavrentyev Avenue</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Preobrazhenskii, V V" uniqKey="Preobrazhenskii V">V. V. Preobrazhenskii</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13, Academician Lavrentyev Avenue</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Putyato, M A" uniqKey="Putyato M">M. A. Putyato</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13, Academician Lavrentyev Avenue</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pchelyakov, O P" uniqKey="Pchelyakov O">O. P. Pchelyakov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13, Academician Lavrentyev Avenue</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rubtsova, N N" uniqKey="Rubtsova N">N. N. Rubtsova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13, Academician Lavrentyev Avenue</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Semyagin, B R" uniqKey="Semyagin B">B. R. Semyagin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13, Academician Lavrentyev Avenue</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kisel, V E" uniqKey="Kisel V">V. E. Kisel</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific Research Institute for Optical Materials and Technologies of Belarus National Technical University, 65, bd. 17, Nezavisimosti Avenue</s1>
<s2>Minsk 220013</s2>
<s3>BLR</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>Minsk 220013</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kuril Chik, S V" uniqKey="Kuril Chik S">S. V. Kuril Chik</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific Research Institute for Optical Materials and Technologies of Belarus National Technical University, 65, bd. 17, Nezavisimosti Avenue</s1>
<s2>Minsk 220013</s2>
<s3>BLR</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>Minsk 220013</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kuleshov, N V" uniqKey="Kuleshov N">N. V. Kuleshov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific Research Institute for Optical Materials and Technologies of Belarus National Technical University, 65, bd. 17, Nezavisimosti Avenue</s1>
<s2>Minsk 220013</s2>
<s3>BLR</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>Minsk 220013</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0277139</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0277139 INIST</idno>
<idno type="RBID">Pascal:11-0277139</idno>
<idno type="wicri:Area/Main/Corpus">002F97</idno>
<idno type="wicri:Area/Main/Repository">003546</idno>
<idno type="wicri:Area/Russie/Extraction">000088</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1612-2011</idno>
<title level="j" type="abbreviated">Laser phys. lett. : (Print)</title>
<title level="j" type="main">Laser physics letters : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium Arsenides</term>
<term>Indium Arsenides</term>
<term>Mirrors</term>
<term>Nanostructures</term>
<term>Nondestructive testing</term>
<term>Optical properties</term>
<term>Optical testing</term>
<term>Quantum wells</term>
<term>Reflectors</term>
<term>Saturable absorbers</term>
<term>Saturable absorption</term>
<term>Ternary compounds</term>
<term>fs range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Essai non destructif</term>
<term>Réflecteur</term>
<term>Miroir</term>
<term>Domaine temps fs</term>
<term>Propriété optique</term>
<term>Nanostructure</term>
<term>Puits quantique</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Absorbant saturable</term>
<term>Essai optique</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>4279F</term>
<term>Absorption saturable</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Mode-locking at repetition rate of 70 MHz with 115 fs spectral-limited pulses was obtained in Yb<sup>3+</sup>
:KY(WO<sub>4</sub>
)<sub>2</sub>
 laser with low loss saturable absorber. Special design and manufacture of saturable absorber incorporating InGaAs quantum wells separated by nanostructured barriers and a wide band total reflector resulted in the semi-conductor saturable absorption mirror (SESAM) with short recovery time and tow non-saturable losses. This permitted to receive average output power of 1.57 W in made-locking regime close to 1.62 W power in cootinuous-wave regime.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1612-2011</s0>
</fA01>
<fA03 i2="1"><s0>Laser phys. lett. : (Print)</s0>
</fA03>
<fA05><s2>8</s2>
</fA05>
<fA06><s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>115 fs pulses from Yb<sup>3+</sup>
:KY(WO<sub>4</sub>
)<sub>2</sub>
 laser with low loss nanostructured saturable absorber</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KOVALYOV (A. A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PREOBRAZHENSKII (V. V.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>PUTYATO (M. A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>PCHELYAKOV (O. P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>RUBTSOVA (N. N.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>SEMYAGIN (B. R.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>KISEL (V. E.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>KURIL'CHIK (S. V.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>KULESHOV (N. V.)</s1>
</fA11>
<fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13, Academician Lavrentyev Avenue</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Scientific Research Institute for Optical Materials and Technologies of Belarus National Technical University, 65, bd. 17, Nezavisimosti Avenue</s1>
<s2>Minsk 220013</s2>
<s3>BLR</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA20><s1>431-435</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>28000</s2>
<s5>354000192130660040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>30 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0277139</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Laser physics letters : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Mode-locking at repetition rate of 70 MHz with 115 fs spectral-limited pulses was obtained in Yb<sup>3+</sup>
:KY(WO<sub>4</sub>
)<sub>2</sub>
 laser with low loss saturable absorber. Special design and manufacture of saturable absorber incorporating InGaAs quantum wells separated by nanostructured barriers and a wide band total reflector resulted in the semi-conductor saturable absorption mirror (SESAM) with short recovery time and tow non-saturable losses. This permitted to receive average output power of 1.57 W in made-locking regime close to 1.62 W power in cootinuous-wave regime.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B79F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Essai non destructif</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Nondestructive testing</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Réflecteur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Reflectors</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Miroir</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Mirrors</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Domaine temps fs</s0>
<s5>41</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>fs range</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>42</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>42</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>47</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>47</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>48</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>48</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Absorbant saturable</s0>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Saturable absorbers</s0>
<s5>61</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Essai optique</s0>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Optical testing</s0>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>4279F</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Absorption saturable</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Saturable absorption</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>185</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri